Bumpless interconnect through ultrafine Cu electrodes by means of surface-activated bonding (SAB) method

IEEE Transactions on Advanced Packaging

Volumn 29, Issue 2, 2006, Pages 218-226

  Shigetou, Akitsu ^a   Itoh, Toshihiro ^a   Matsuo, Mie ^b   Hayasaka, Nobuo ^b   Okumura, Katsuya ^a   Suga, Tadatomo ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Bumpless interconnect; Chemical mechanical polishing (CMP); Surface activated bonding (SAB) method

Indexed keywords

BONDING; CHEMICAL MECHANICAL POLISHING; ELECTRODES; REACTIVE ION ETCHING; SURFACE MOUNT TECHNOLOGY; THERMAL EFFECTS;

BUMPLESS INTERCONNECT; SURFACE ACTIVATED BONDING; ULTRAFINE COPPER ELECTRODES;

ELECTRONICS PACKAGING;

EID: 33646507032     PISSN: 15213323     EISSN: None     Source Type: Journal    
DOI: 10.1109/TADVP.2006.873138     Document Type: Article

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