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Volumn , Issue , 2009, Pages 355-359

High density Cu-Cu interconnect bonding for 3-D integration

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATION; BOND STRENGTH; BONDING PARAMETERS; CU INTERCONNECT; DEVICE LAYERS; DEVICE TECHNOLOGIES; ELECTRICAL CONNECTIVITY; ENHANCED PERFORMANCE; FABRICATION PROCESS; HIGH DENSITY; LARGE AREA ARRAYS; LOW RESISTANCE; MECHANICAL STRENGTH; METAL SYSTEMS; MULTIFUNCTIONAL MICROSYSTEMS; OPTIMIZED DEVICES; POLYMER BONDING; PRESSURE AND TEMPERATURE; SMALL PITCH; THERMAL RELIABILITY;

EID: 70349656083     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2009.5074040     Document Type: Conference Paper
Times cited : (31)

References (7)
  • 6
    • 70349688016 scopus 로고    scopus 로고
    • Fabrication and characterization of metal-to-metal interconnect structures for 3-D integration
    • to be published in
    • A. Huffman, J. Lannon, M. Lueck, C. Gregory, and D. Temple, "Fabrication and Characterization of Metal-to- Metal Interconnect Structures for 3-D Integration", to be published in Mater. Res. Soc. Symp. Proc. 2008.
    • (2008) Mater. Res. Soc. Symp. Proc.
    • Huffman, A.1    Lannon, J.2    Lueck, M.3    Gregory, C.4    Temple, D.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.