Bumpless interconnect of 6-μm-pitch Cu electrodes at room temperature

IEEE Transactions on Advanced Packaging

Volumn 31, Issue 3, 2008, Pages 473-478

  Shigetou, Akitsu ^a,b   Itoh, Toshihiro ^a,c   Sawada, Kanako ^d   Suga, Tadatomo ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d TOSHIBA CORPORATION   (Japan)

Author keywords

Bumpless interconnect; Cu frame; Room temperature; Sealing; Surface activated bonding (SAB)

Indexed keywords

BUMPLESS INTERCONNECT; CU FRAME; ROOM TEMPERATURE; SEALING; SURFACE ACTIVATED BONDING (SAB);

CONTACT RESISTANCE; ELECTRIC BATTERIES; ELECTRODES; FILM PREPARATION; METAL CLADDING; REACTIVE ION ETCHING; STATISTICAL TESTS;

COPPER;

EID: 64049097416     PISSN: 15213323     EISSN: None     Source Type: Journal    
DOI: 10.1109/TADVP.2008.920644     Document Type: Article

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