Inhomogeneous Ni/Ge Schottky barriers due to variation in Fermi-level pinning

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1599-1602

  Li, X V ^a   Husain, M K ^a   Kiziroglou, M ^a   de Groot, C H ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

Electrodeposition; Schottky barriers

Indexed keywords

BARRIER MODEL; FERMI LEVEL PINNING; GE SURFACES; HIGH QUALITY; I-V MEASUREMENTS; INTERFACIAL OXIDES; LOW TEMPERATURES; MEAN VALUES; METAL-INDUCED GAP STATE; N-TYPE GE; NMOSFETS; REVERSE LEAKAGE CURRENT; ROOM TEMPERATURE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SOURCE AND DRAINS; SPATIAL VARIATIONS; STANDARD DEVIATION;

ELECTRODEPOSITION; FERMIONS; GERMANIUM; SEMICONDUCTOR METAL BOUNDARIES; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 67349177226     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.097     Document Type: Article

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