Compact modeling of variability effects in nanoscale nand flash memories

IEEE Transactions on Electron Devices

Volumn 58, Issue 8, 2011, Pages 2302-2309

  Spessot, Alessio ^a   Monzio Compagnoni, Christian ^b,c   Farina, Fabrizio ^b,c   Calderoni, Alessandro ^a   Spinelli, Alessandro S ^b,c,d   Fantini, Paolo ^a  

^a Technology Development   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c Italian University Nano Electronics Team IUNET   (Italy)

^d IFN CNR   (Italy)

Author keywords

Flash memories; semiconductor device modeling; threshold voltage distribution; variability effects

Indexed keywords

CAPACITIVE COUPLINGS; COMPACT MODEL; COMPACT MODELING; DEVICE OPERATIONS; LOW COMPUTATIONAL LOADS; MEMORY ARRAY; MODEL PARAMETERS; MONTE CARLO; NAND FLASH MEMORY; NANO SCALE; PROGRAM AND ERASE; SEMICONDUCTOR DEVICE MODELING; STATISTICAL DISPERSION; TECHNOLOGY DESIGNS; TECHNOLOGY NODES; THRESHOLD-VOLTAGE DISTRIBUTION; VARIABILITY EFFECTS;

COMPUTER SIMULATION; NAND CIRCUITS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

FLASH MEMORY;

EID: 79960837381     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2147319     Document Type: Article

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