Variability effects on the VT distribution of nanoscale NAND flash memories

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 970-974

  Spessot, Alessio ^a   Calderoni, Alessandro ^a   Fantini, Paolo ^a   Spinelli, Alessandro S ^b,c   Compagnoni, Christian Monzio ^b   Farina, Fabrizio ^b   Lacaita, Andrea L ^b,c   Marmiroli, Andrea ^a  

^a Numonyx   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c IFN CNR   (Italy)

Author keywords

Flash memories; Semiconductor device modeling; Threshold voltage distribution; Variability effects

Indexed keywords

ARRAY PERFORMANCE; COMPACT MODEL; DECA-NANOMETER; EXPERIMENTAL DATA; FUTURE TECHNOLOGIES; INTRINSIC VARIABILITIES; MONTE CARLO SIMULATION; NAND FLASH MEMORY; NANO SCALE; RELIABILITY IMPACTS; SCALE DOWN; SEMICONDUCTOR DEVICE MODELING; SOURCES OF VARIABILITY; STATISTICAL FLUCTUATIONS; TECHNOLOGY NODES; THRESHOLD VOLTAGE DISTRIBUTION; VARIABILITY EFFECTS;

COMPUTER SIMULATION; FLASH MEMORY; MONTE CARLO METHODS; NAND CIRCUITS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; THRESHOLD VOLTAGE; VOLTAGE DISTRIBUTION MEASUREMENT; VOLTAGE DIVIDERS;

RELIABILITY;

EID: 77957896301     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488695     Document Type: Conference Paper

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