Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth

Journal of Applied Physics

Volumn 109, Issue 12, 2011, Pages

  Polyakov, A Y ^a   Lee, I H ^a   Smirnov, N B ^b   Govorkov, A V ^b   Kozhukhova, E A ^b   Pearton, S J ^c  

^a Chonbuk National University   (South Korea)

^b INSTITUTE OF RARE METALS   (Russian Federation)

^c J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP-LEVEL SPECTROSCOPY; DONOR CONCENTRATIONS; EPITAXIAL LATERAL OVERGROWTH; EXCITATION CONDITIONS; GREEN BAND; HIGH INJECTION; HYDRIDE VAPOR PHASE EPITAXY; LARGE GROUPS; MICRO-CATHODOLUMINESCENCE; TRAP CONCENTRATION; YELLOW BANDS; YELLOW LUMINESCENCE;

ACTIVATION ENERGY; EPITAXIAL GROWTH; GALLIUM NITRIDE; HOLE TRAPS; HYDRIDES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM COMPOUNDS; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 79960193469     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3599894     Document Type: Article

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