Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth

Applied Physics Letters

Volumn 92, Issue 4, 2008, Pages

  Yakimov, E B ^a   Vergeles, P S ^a   Polyakov, A Y ^b   Smirnov, N B ^b   Govorkov, A V ^b   Lee, In Hwan ^c   Lee, Cheul Ro ^c   Pearton, S J ^d  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b INSTITUTE OF RARE METALS   (Russian Federation)

^c Chonbuk National University   (South Korea)

^d UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; EPITAXIAL GROWTH; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SILICON;

DONOR NONUNIFORMITY; ELECTRON BEAM INDUCED CURRENT (EBIC); EPITAXIAL LATERAL OVERGROWTH (ELOG); LOCAL DONOR CONCENTRATIONS;

GALLIUM NITRIDE;

EID: 38849138079     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2840190     Document Type: Article

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