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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 3, 2010, Pages 608-612

Neutron transmutation doping effects in GaN

(8) Polyakov, A Y a Smirnov, N B a Govorkov, A V a Kolin, N G b Merkurisov, D I b Boiko, V M b Korulin, A V b Pearton, S J c

a INSTITUTE OF RARE METALS (Russian Federation)

b KARPOV INSTITUTE OF PHYSICAL CHEMISTRY (Russian Federation)

c J Crayton Pruitt Family Department of Biomedical Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPLEXATION; CONCENTRATION (PROCESS); GALLIUM ALLOYS; GALLIUM NITRIDE; GERMANIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NEUTRONS; NUCLEAR REACTORS; SEMICONDUCTOR DOPING;

ADMITTANCE SPECTROSCOPIES; CONCENTRATION OF; DONOR CONCENTRATIONS; FAST NEUTRONS; FLUENCES; GAN FILM; INTERMEDIATE ANNEALINGS; IONIZATION ENERGIES; ISOCHRONAL ANNEALING; METALORGANIC CHEMICAL VAPOR DEPOSITION; NEUTRON TRANSMUTATION DOPING; RADIATION DEFECTS; REACTOR NEUTRONS; RECOVERY STAGES; REVERSE ANNEALING; SEMI-INSULATING; THERMAL NEUTRONS; THREE STAGES;

NEUTRON IRRADIATION;

EID: 77953007046 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3431083 Document Type: Conference Paper

Times cited : (34)

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