Vacancies as compensating centers in bulk GaN: Doping effects

Journal of Crystal Growth

Volumn 246, Issue 3-4, 2002, Pages 281-286

  Saarinen, K ^a   Ranki, V ^a   Suski, T ^b   Bockowski, M ^b   Grzegory, I ^b  

^a AALTO UNIVERSITY   (Finland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

A1. Defects; A1. Doping; A1. Positron annihilation; B1. Gallium nitride

Indexed keywords

DOPING (ADDITIVES); FERMI LEVEL; LATTICE CONSTANTS; POSITRON ANNIHILATION SPECTROSCOPY;

GALLIUM VACANCY COMPLEXES;

GALLIUM NITRIDE;

EID: 0037121667     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01752-9     Document Type: Conference Paper

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