SCOPUS 정보 검색 플랫폼

Volumn 106, Issue 10, 2009, Pages

Alpha particle detection with GaN Schottky diodes

(15) Polyakov, A Y a Smirnov, N B a Govorkov, A V a Markov, A V a Kozhukhova, E A a Gazizov, I M a Kolin, N G b Merkurisov, D I b Boiko, V M b Korulin, A V b Zalyetin, V M c Pearton, S J d Lee, I H e Dabiran, A M f Chow, P P f

a INSTITUTE OF RARE METALS (Russian Federation)

b Federal State Unitary Enterprise (Russian Federation)

c Institute of Physical Technical Problems (Russian Federation)

d J Crayton Pruitt Family Department of Biomedical Engineering (United States)

e Chonbuk National University (South Korea)

f SVT ASSOCIATES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COLLECTION EFFICIENCY; COLLECTION EFFICIENCY; DEEP ELECTRON TRAPS; DEEP TRAPS; DETECTOR STRUCTURE; DONOR DOPING; DOPING LEVELS; ELECTRICAL PROPERTY; EPITAXIAL LATERAL OVERGROWTH; GAN FILM; GAN LAYERS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; REVERSE CURRENTS; SCHOTTKY DIODES; SPACE CHARGE REGIONS; THICKNESS OF THE FILM;

CHEMICAL BEAM EPITAXY; DIODES; DOPING (ADDITIVES); ELECTRIC PROPERTIES; EPITAXIAL FILMS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; ORGANIC CHEMICALS; ORGANOMETALLICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM;

RADIATION DETECTORS;

EID: 71749102000 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3261806 Document Type: Article

Times cited : (47)

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