Deep-level studies in GaN layers grown by epitaxial lateral overgrowth

Thin Solid Films

Volumn 516, Issue 8, 2008, Pages 2035-2040

  Lee, In Hwan ^a   Polyakov, A Y ^b   Smirnov, N B ^b   Govorkov, A V ^b   Markov, A V ^b   Pearton, S J ^c  

^a Chonbuk National University   (South Korea)

^b INSTITUTE OF RARE METALS   (Russian Federation)

^c J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

Deep level transient spectroscopy; Electrical properties and measurements; Gallium nitride; Metal organic chemical vapor deposition

Indexed keywords

CATHODOLUMINESCENCE; CHARGE CARRIERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; ELECTRON BEAMS; EPITAXIAL FILMS; IMAGING TECHNIQUES; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

DIFFUSION LENGTHS; ELECTRON BEAM INDUCED CURRENT (EBIC) IMAGING; INITIAL TEMPLATES;

GALLIUM NITRIDE;

EID: 38749141021     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.07.144     Document Type: Article

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