Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 5238-5240

  Polyakov, A Y ^a   Govorkov, A V ^a   Smirnov, N B ^a   Fang, Z Q ^b   Look, D C ^b   Park, S S ^c   Han, J H ^c  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b WRIGHT STATE UNIVERSITY   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CLEAVED SURFACES; DARK-LINES; ELECTRON-BEAM-INDUCED CURRENT; HYDRIDE VAPOR PHASE EPITAXY; LUMINESCENCE BAND; MICRO-CATHODOLUMINESCENCE; NON-RADIATIVE; SPECTRA MEASUREMENTS;

EPITAXIAL GROWTH; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE DEFECTS; VAPORS;

ELECTRIC CURRENTS;

EID: 18744401155     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1511822     Document Type: Article

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