Neutron radiation effects in epitaxially laterally overgrown GaN films

Journal of Electronic Materials

Volumn 36, Issue 10, 2007, Pages 1320-1325

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Markov, A V ^a   Yakimov, E B ^b   Vergeles, P S ^b   Kolin, N G ^c   Merkurisov, D I ^c   Boiko, V M ^c   Lee, In Hwan ^d   Lee, Cheul Ro ^d   Pearton, S J ^e  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^c Federal State Unitary Enterprise   (Russian Federation)

^d Chonbuk National University   (South Korea)

^e J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

ELOG; GaN; Neutron irradiation

Indexed keywords

HIGH-DISLOCATION-DENSITY; OVERGROWN REGIONS;

ELECTRON TRAPS; EPITAXIAL GROWTH; FERMI LEVEL; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NEUTRON IRRADIATION;

METALLIC FILMS;

EID: 34848842468     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0203-8     Document Type: Article

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