Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 3, 2008, Pages 990-994

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Markov, A V ^a   Yakimov, E B ^b   Vergeles, P S ^b   Lee, In Hwan ^c   Lee, Cheul Ro ^c   Pearton, S J ^d  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^c Chonbuk National University   (South Korea)

^d J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT IMAGING; DEEP LEVEL CONCENTRATIONS; EPITAXIALLY LATERALLY OVERGROWN (ELOG) FILMS;

DENSITY (OPTICAL); DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; EPITAXIAL GROWTH; FILM GROWTH; FILM THICKNESS;

GALLIUM NITRIDE;

EID: 44649089944     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2919148     Document Type: Article

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