Effects of Si ion implantation and post-annealing on yellow luminescence from GaN

Physica B: Condensed Matter

Volumn 322, Issue 1-2, 2002, Pages 51-56

  Dai, L ^a   Zhang, J C ^a,b   Chen, Y ^a   Ran, G Z ^a   Qin, G G ^a,c  

^a PEKING UNIVERSITY   (China)

^b Qu fu Normal University   (China)

^c INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

GaN; Ion implantation; Photoluminescence; Yellow luminescence

Indexed keywords

ANNEALING; GALLIUM NITRIDE; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

YELLOW LUMINESCENCE;

PHOTOLUMINESCENCE;

EID: 0036718506     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(02)00598-7     Document Type: Article

References (23)