Confocal Raman depth-scanning spectroscopic study of phonon-plasmon modes in GaN epilayers

Journal of Applied Physics

Volumn 109, Issue 12, 2011, Pages

  Strelchuk, V V ^a   Bryksa, V P ^a   Avramenko, K A ^a   Valakh, M Ya ^a   Belyaev, A E ^a   Mazur, Yu I ^b   Ware, M E ^b   Decuir Jr , E A ^b   Salamo, G J ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY FLUCTUATIONS; CONFOCAL MICRO-RAMAN; CONFOCAL RAMAN; DEPTH PROFILE; DIODE STRUCTURE; FLUCTUATION MECHANISMS; FREE CARRIER CONCENTRATION; GAN EPILAYERS; GAN LAYERS; HIGH ELECTRON CONCENTRATION; HIGH QUALITY; LINE SHAPE; LONGITUDINAL OPTICAL; NONUNIFORMITY; PHONON DAMPING; PHONON-PLASMON MODES; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; PLASMON FREQUENCY; RAMAN CROSS SECTIONS; SAPPHIRE SUBSTRATES; SELF-CONSISTENT MODEL; SPATIAL VARIATIONS; SPECTROSCOPIC STUDIES;

ELECTRON MOBILITY; ELECTRON-PHONON INTERACTIONS; EPILAYERS; GUNN DIODES; GUNN EFFECT; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PLASMONS; PUMPING (LASER); RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS;

GALLIUM NITRIDE;

EID: 79960161395     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3599892     Document Type: Article

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