Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering

Applied Physics Letters

Volumn 93, Issue 12, 2008, Pages

  Nakashima, S ^a   Kitamura, T ^a,c   Kato, T ^a   Kojima, K ^a   Kosugi, R ^a   Okumura, H ^a   Tsuchida, H ^b   Ito, M ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

^c HITACHI CABLE LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARCHITECTURAL ACOUSTICS; BIOACTIVITY; CIVIL AVIATION; CONCENTRATION (PROCESS); RAMAN SCATTERING; SILICON CARBIDE;

CONCENTRATION RANGES; FREE-CARRIER CONCENTRATION; FREE-CARRIER DENSITY; LO-PHONON-PLASMON; PEAK FREQUENCIES;

CARRIER CONCENTRATION;

EID: 52949102166     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2992063     Document Type: Article

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