Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Kladko, V P ^a   Kolomys, A F ^a   Slobodian, M V ^a   Strelchuk, V V ^a   Raycheva, V G ^a   Belyaev, A E ^a   Bukalov, S S ^b   Hardtdegen, H ^a,c   Sydoruk, V A ^c   Klein, N ^c   Vitusevich, S A ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b A N NESMEYANOV INSTITUTE OF ORGANOELEMENT COMPOUNDS   (Russian Federation)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; BLOCK STRUCTURES; COHERENT DIFFRACTIONS; CONFOCAL MICRO-RAMAN; DEPTH DISTRIBUTIONS; DISLOCATION DENSITIES; ELASTIC PROPERTIES; HIGH RESOLUTION X-RAY DIFFRACTIONS; INHOMOGENEOUS DEFORMATIONS; INTERFACE REGIONS; INTERNAL STRAINS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; MICRODEFORMATIONS; MICROSCALE LEVELS; MOSAIC BLOCKS; MOSAIC STRUCTURES; NITRIDE LAYERS; SAPPHIRE SUBSTRATES; SCATTERING METHODS; SUBSTRATE THICKNESS;

CORUNDUM; CRYSTAL STRUCTURE; DEFORMATION; DIFFRACTION; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; RAMAN SCATTERING; SAPPHIRE; SINGLE CRYSTALS;

SUBSTRATES;

EID: 63749106580     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3094022     Document Type: Article

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