A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films

Journal of Applied Physics

Volumn 88, Issue 4, 2000, Pages 1811-1817

  Meister, D ^a   Bohm M ^a   Topf, M ^a   Kriegseis, W ^a   Burkhardt, W ^a   Dirnstorfer, I ^a   Rosel S ^a   Farangis, B ^a   Meyer, B K ^a   Hoffmann, A ^b   Siegle, H ^b   Thomsen, C ^b   Christen, J ^c   Bertram, F ^c  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000623879     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1305549     Document Type: Review

References (32)

1. C. G. Van de Walle, C. Slampfl, J. Neugebauer, M. D. McCluskey, and N. M. Johnson, MRS Internet J. Nitride Semicond. Res. 4S1, 1 (1999).
2. J. Neugebauer and C. G. Van de Walle, Phys. Rev. B 50, 8067 (1994).
3. T. Mattila and R. M. Nieminen, Phys. Rev. B 54, 16676 (1996).
4. P. Boguslawski, E. L. Briggs, and J. Bernholc, Phys. Rev. B 51, 17255 (1955).
5. J. Neugebauer and C. G. Van de Walle, in Proceedings of the 22nd International Conference on the Physics of Semiconductors (World Scientific, Singapore, 1995), p. 2327.
6. W. Seifert, R. Franzheld, E. Butter, H. Sobotta, and V. Riede, Cryst. Res. Technol. 18, 383 (1983).
7. W. Götz, N. M. Johnson, C. Chen, H. Liu, C. Kuo, and W. Imler, Appl. Phys. Lett. 68, 3144 (1996).
8. W. Götz, J. Walker, L. T. Romano, and N. M. Johnson, Mater. Res. Soc. Symp. Proc. 449, 525 (1997).
9. E. L. Piner, M. K. Behbehani, N. A. El-Masry, J. C. Roberts, F. G. McIntosh, and S. M. Bedair, Appl. Phys. Lett. 71, 2023 (1997).
10. W. Götz, L. T. Romano, J. Walker, N. M. Johnson, and R. J. Molnar, Appl. Phys. Lett. 72, 1214 (1998).
11. D. C. Look and R. J. Molnar, Appl. Phys. Lett. 70, 3377 (1997); D. C. Look, Mater. Sci. Eng., B 50, 50 (1997).
12. D. C. Look and R. J. Molnar, Appl. Phys. Lett. 70, 3377 (1997); D. C. Look, Mater. Sci. Eng., B 50, 50 (1997).
13. W. Götz, R. S. Kern, C. H. Chen, H. Liu, D. A. Steigerwald, and R. M. Fletcher, Mater. Sci. Eng., B 59, 211 (1999).
14. W. Götz, N. M. Johnson, D. P. Bour, C. Chen, H. Liu, C. Kuo, and W. Imler, Mater. Res. Soc. Symp. Proc. 395, 443 (1996).
15. D. C. Look, J. R. Sizelove, S. Keller, Y. F. Wu, U. K. Mishra, and S. P. DenBaars, Solid State Commun. 102, 297 (1997).
16. W. M. Chen, I. A. Buyanova, Mt. Wagner, B. Monemar, J. L. Lindström, H. Amano, and I. Akasaki, MRS Internet J. Nitride Semicond. Res. 4S1, (1999).
17. M. Topf, W. Kriegseis, W. Burkhardt, I. Dirnstorfer, D. Meister, and B. K. Meyer, Mater. Sci. Forum 264-268, 1232 (1998).
18. H. Siegle, Gitterdynamik und Defekte in Gallium- und Alumiumnitrid (Wissenschaft und Technik, Berlin, 1998).
19. M. Topf, thesis, Giesen, Germany, July 1999.
20. W. Götz, L. T. Romano, B. S. Krusor, N. M. Johnson, and R. J. Molnar, Appl. Phys. Lett. 69, 242 (1996).
21. L. Eckey et al., Inst. Conf. Ser. 142, 927 (1996).
22. S. Fischer et al., J. Cryst. Growth 189-190, 556 (1998).
23. A. Hoffmann, Optical Properties of GaN, in Festkörperprobleme/ Advances in Solid State Physics Vol. 36, edited by R. Helbig (Vieweg, Braunschweig, 1996), p. 33.
24. J. Christen, M. Grundmann, and D. Bimberg, J. Vac. Sci. Technol. B 9, 2358 (1991).
25. B. K. Meyer, D. Volm, A. Graber, H. Alt, T. Detchprohm, H. Amano, and I. Akasaki, Solid State Commun. 95, 597 (1995).
26. H. Alt, B. K. Meyer, D. Volm, A. Graber, M. Drechsler, T. Detchprohm, H. Amano, and I. Akasaki, Mater. Sci. Forum 196-201, 17 (1995).
27. Y. J. Wang, H. K. Ng, K. Doverspike, D. K. Gaskill, T. Ikedo, I. Akasaki, and H. Amano, J. Appl. Phys. 79, 8007 (1996).
28. S. J. Pearton, C. R. Abernathy, and F. Ren, Electron. Lett. 30, 527 (1994).
29. J. Neugebauer (private communication).
30. V. W. Chin, T. L. Tansley, and T. Ostochan, J. Appl. Phys. 75, 7365 (1994).
31. D. C. Look and J. R. Sizelove, Phys. Rev. Lett. 82, 1237 (1999).
32. H. M. Ng, D. Doppalapudi, T. D. Moustakas, N. G. Weimann, and L. F. Eastman, Appl. Phys. Lett. 73, 821 (1998).