A new approach to analysis of mosaic structure peculiarities of gallium nitride epilayers

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 1141-1144

  Kolmakov, A G ^a   Emtsev, V V ^b   Lundin, W V ^b   Ratnikov, V V ^b   Shmidt, N M ^b   Titkov, A N ^b   Usikov, A S ^b  

^a BAIKOV INSTITUTE OF METALLURGY AND MATERIALS SCIENCE   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

GaN; Mosaic structure; Multifractal analysis

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; SURFACE STRUCTURE; TOPOLOGY;

GALLIUM NITRIDE EPILAYERS; MOSAIC STRUCTURE;

GALLIUM NITRIDE;

EID: 0035676164     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00917-6     Document Type: Article

References (8)