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Applied Physics Letters

Volumn 95, Issue 3, 2009, Pages

Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures

(7) Kladko, V P a Kuchuk, A V a Safryuk, N V a MacHulin, V F a Belyaev, A E a Hardtdegen, H b Vitusevich, S A a,b

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; DISLOCATION DENSITIES; ELASTIC STRAIN RELAXATION; HIGH RESOLUTION X RAY DIFFRACTION; METALORGANIC CHEMICAL VAPOR DEPOSITION; NANO-COLUMNS; SAPPHIRE SUBSTRATES;

CORUNDUM; CRYSTALS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; STRAIN CONTROL; STRAIN RELAXATION; SUBSTRATES;

LATTICE MISMATCH;

EID: 67651241727 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3184569 Document Type: Article

Times cited : (12)

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