Effect of H2O chemisorption on passivation of Ge(100) surface studied by scanning tunneling microscopy

Surface Science

Volumn 605, Issue 15-16, 2011, Pages 1583-1588

  Lee, Joon Sung ^a   Kaufman Osborn, Tobin ^a   Melitz, Wilhelm ^a   Lee, Sangyeob ^a   Kummel, Andrew ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Chemisorption; Germanium; Scanning tunneling microscopy; Scanning tunneling spectroscopies; Semiconducting surfaces; Water

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; CHEMISORPTION; DANGLING BONDS; GERMANIUM; MONOLAYERS; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SPECTROSCOPY; TEMPERATURE DISTRIBUTION; WATER;

DISSOCIATIVE CHEMISORPTION; ELECTRONIC PASSIVATION; GE(100) SURFACE; HIGHLY ORDERED STRUCTURE; SCANNING TUNNELING SPECTROSCOPY; SEMICONDUCTING SURFACES; SURFACE DANGLING BONDS; TEMPERATURE DEPENDENCE;

GERMANIUM COMPOUNDS;

EID: 79959842767     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2011.05.034     Document Type: Article

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