High-mobility Ge N-MOSFETs and mobility degradation mechanisms

IEEE Transactions on Electron Devices

Volumn 58, Issue 1, 2011, Pages 59-66

  Kuzum, Duygu ^a   Krishnamohan, Tejas ^a,b   Nainani, Aneesh ^a   Sun, Yun ^c   Pianetta, Piero A ^a,c   Wong, H S Philip ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

GeO2; germanium; mobility; n type metaloxidesemiconductor field effect transistor (N MOSFET); ozone oxidation; parasitic series resistance; trapping

Indexed keywords

GEO2; MOBILITY; OZONE OXIDATION; PARASITIC SERIES RESISTANCE; TRAPPING;

DEGRADATION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALVANOMAGNETIC EFFECTS; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HALL MOBILITY; OXIDATION; OZONE; OZONE RESISTANCE; PASSIVATION;

MOSFET DEVICES;

EID: 78650899304     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2088124     Document Type: Article

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