Thermal decomposition pathway of Ge and Si oxides: Observation of a distinct difference

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 289-292

  Prabhakaran, K ^a   Maeda, F ^a   Watanabe, Y ^a   Ogino, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; INTERFACES (MATERIALS); PHOTOEMISSION; PYROLYSIS; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICA; SYNCHROTRON RADIATION; THERMODYNAMIC STABILITY; ULTRATHIN FILMS;

GERMANIUM OXIDE;

SEMICONDUCTING FILMS;

EID: 0034226431     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00881-6     Document Type: Article

References (14)

1. Grunthaner F.J., Grunthaner P.J. Mater. Sci. Rep. 1:1986;65.
2. Engel T. Surf. Sci. Rep. 18:(4):1993.
3. 2 Interface. 1988;Plenum Press, New York.
4. Prabhakaran K., Kobayashi Y., Ogino T. Surf. Sci. 290:1993;239.
5. Prabhakaran K., Ogino T. Surf. Sci. 325:1995;263.
6. Hansen D.A., Hudson J.B. Surf. Sci. 292:1993;17.
7. Muramatsu Y., Maeda F., Maeyama S., Watanabe Y., Oshima M. Nucl. Instrum. Methods Phys. Res. A. 342:1994;596.
8. Prabhakaran K., Ogino T., Hull R., Bean J.C., Peticolas L.J. Surf. Sci. 316:1994;L1031.
9. Kobayashi Y., Prabhakaran K., Ogino T. Surf. Sci. 329:1995;167.
10. Li N., Yoshinobu T., Iwasaki H. Jpn. J. Appl. Phys. 37:1998;L995.
11. Lutz F., Bischoff J.L., Kubler L., Bolmont D. Phys. Rev. B. 40:(15):1989;10356.
12. Watanabe H., Fujita K., Ichikawa M. Appl. Phys. Lett. 70:(9):1997;1095.
13. CRC Handbook of Chemistry and Physics, CRC Press, Boca Raton, FL, 1989.
14. Raider S.I., Flitsch R. J. Electrochem. Soc. November. 1976;1754.