Monolayer passivation of Ge(100) surface via nitridation and oxidation

ECS Transactions

Volumn 33, Issue 6, 2010, Pages 447-454

  Lee, Joon Sung ^a,b   Bishop, Sarah R ^a   Kaufman Osborn, Tobin ^a,b   Chagarov, Evgueni ^a   Kummel, Andrew C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CYCLOTRONS; DANGLING BONDS; DENSITY FUNCTIONAL THEORY; ELECTRON CYCLOTRON RESONANCE; GERMANIUM METALLOGRAPHY; GERMANIUM OXIDES; HYDROGEN BONDS; MONOLAYERS; PASSIVATION; SCANNING TUNNELING MICROSCOPY;

DIRECT NITRIDATION; E BEAM EVAPORATION; ELECTRON CYCLOTRON RESONANCE PLASMA; H-TERMINATED SURFACE; HYDROGEN PASSIVATION; ORDERED STRUCTURES; SCANNING TUNNELING SPECTROSCOPY; VALENCE BAND EDGES;

SI-GE ALLOYS;

EID: 79952649533     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3487575     Document Type: Conference Paper

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