Ge/GeO2 interface control with High Pressure Oxidation for improving electrical characteristics

ECS Transactions

Volumn 19, Issue 1, 2009, Pages 165-173

  Lee, Choong Hyun ^a   Tabata, Toshiyuki ^a   Nishimura, Tomonori ^a,b   Nagashio, Kosuke ^a,b   Kita, Koji ^a,b   Toriumi, Akira ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CMOS INTEGRATED CIRCUITS; DESORPTION; ENERGY GAP; LOGIC GATES; OXIDATION; TEMPERATURE;

ABSORPTION EDGES; C-V CHARACTERISTIC; ELECTRICAL CHARACTERISTIC; FREQUENCY DISPERSION; INTERFACE CONTROL; LOW TEMPERATURES; OXYGEN ANNEALING; PHOTOABSORPTIONS;

GERMANIUM OXIDES;

EID: 74949108219     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3118942     Document Type: Conference Paper

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