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Applied Physics Letters

Volumn 97, Issue 15, 2010, Pages

Carrier localization in m -plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy

(7) Liuolia, V a Pinos, A a Marcinkevicius S a Lin, Y D b Ohta, H b Denbaars, S P b Nakamura, S b

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

b University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LOCALIZATION; DUAL LOCALIZATIONS; GAN SUBSTRATE; INGAN/GAN QUANTUM WELL; LOCALIZATION CENTERS; M-PLANE; NEAR-FIELD PHOTOLUMINESCENCE; NONPOLAR M-PLANE; SCANNING NEAR FIELD; SCANNING NEAR-FIELD OPTICAL MICROSCOPY; SPECTRAL WIDTHS;

GALLIUM ALLOYS; GALLIUM NITRIDE; MONOLAYERS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

NEAR FIELD SCANNING OPTICAL MICROSCOPY;

EID: 77958092390 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3502482 Document Type: Article

Times cited : (43)

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