Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 1, 2007, Pages 294-298

  Jahn, Uwe ^a   Jiang, De Sheng ^a,b   Ploog, Klaus H ^a   Wang, Xiaolan ^b   Zhao, Degang ^b   Yang, Hui ^b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT REGIONS; DOMAIN BOUNDARIES; NUCLEATION LAYERS; PYRAMIDAL SURFACE MORPHOLOGY;

GALLIUM NITRIDE; GROWTH (MATERIALS); LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; OPTICAL PROPERTIES;

ALUMINUM NITRIDE;

EID: 33846459012     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200673538     Document Type: Conference Paper

References (10)

1. A. Petersson et al., MRS Internet J. Nitride Semicond. Res. 7, 5 (2002).
2. C. J. Collins et al., Appl. Phys. Lett. 86, 031916 (2005).
3. P. Chen et al., J. Cryst. Growth 273, 74 (2004).
4. L. Chang et al., Appl. Phys. Lett. 79, 928 (2001).
5. H. K. Cho et al., Appl. Phys. Lett. 80, 1370 (2002).
6. A. Thamm et al., phys. stat. sol. (a) 180, 73 (2000).
7. L. T. Romano and T. H. Myers, Appl. Phys. Lett. 71, 3486 (1997).
8. J. Jasinski et al., Appl. Phys. Lett. 83, 2811 (2003).
9. M. Seelmann-Eggebert et al., Appl. Phys. Lett. 71, 2635 (1997).
10. D. G. Zhao et al., Appl. Phys. Lett. 85, 3486 (2004).