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Journal of Applied Physics

Volumn 108, Issue 9, 2010, Pages

Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes

(6) Pinos, A a Marcinkevicius S a Yang, J b Gaska, R b Shatalov, M b Shur, M S c

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

b SENSOR ELECTRONIC TECHNOLOGY INC (United States)

c RENSSELAER POLYTECHNIC INSTITUTE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGING PROCESS; AL CONTENT; ALGAN QUANTUM WELLS; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; DEFECT GENERATION; EMISSION BANDS; FAR FIELD; HIGH AL CONTENT; HIGH CONDUCTIVITY; HIGH CURRENT STRESS; N VACANCY; NITROGEN VACANCIES; OPTICAL STUDY; SCANNING NEAR FIELD; TIME-RESOLVED PHOTOLUMINESCENCE;

LIGHT EMISSION; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; ULTRAVIOLET RADIATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 78649247963 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3506697 Document Type: Article

Times cited : (30)

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