Al incorporation, structural and optical properties of AlxGa1-xN (0.13≤x≤0.8) alloys grown by MOCVD

Journal of Crystal Growth

Volumn 310, Issue 21, 2008, Pages 4499-4502

  Liu, B ^a   Zhang, R ^a   Xie, Z L ^a   Liu, Q J ^a   Zhang, Z ^a   Li, Y ^a   Xiu, X Q ^a   Yao, J ^a   Mei, Q ^a   Zhao, H ^a   Han, P ^a   Lu, H ^a   Chen, P ^a   Gu, S L ^a   Shi, Y ^a   Zheng, Y D ^a   Cheung, W Y ^b   Ke, N ^b   Xu, J B ^b  

^a NANJING UNIVERSITY   (China)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

A3. Metal organic vapor phase epitaxy; B1. Alloys; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

OPTICAL PROPERTIES;

A3. METAL-ORGANIC VAPOR PHASE EPITAXY; B1. ALLOYS; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS;

ALUMINUM;

EID: 53449097045     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.076     Document Type: Article

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