Growth kinetics of AlxGa1-xN grown via ammonia-based metal-organic molecular beam epitaxy

Journal of Crystal Growth

Volumn 312, Issue 2, 2010, Pages 209-212

  Billingsley, Daniel ^a   Henderson, Walter ^a   Pritchett, David ^a   Alan Doolittle, W ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

A3. Metal organic molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

A3. METAL-ORGANIC MOLECULAR BEAM EPITAXY; ACTIVE SPECIES; AL COMPOSITION; AL INCORPORATION; ALGAN; ALGAN FILMS; CATALYZATION; GAN TEMPLATE; GAS PHASE COMPOSITION; GROWTH OF GAN; GROWTH REGIME; METAL-ORGANIC MOLECULAR BEAM EPITAXY; SEMI CONDUCTING III-V MATERIALS; STRUCTURAL CHARACTERISTICS; SURFACE PITTING; THREADING DISLOCATION; UTILIZATION EFFICIENCY; V/III RATIO;

ALUMINUM; AMMONIA; DESORPTION; GALLIUM ALLOYS; GALLIUM NITRIDE; GASES; GROWTH KINETICS; METALS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHASE COMPOSITION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES;

EPITAXIAL GROWTH;

EID: 71649109689     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.10.044     Document Type: Article

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