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Applied Physics Letters

Volumn 95, Issue 11, 2009, Pages

Time-resolved luminescence studies of proton-implanted GaN

(4) Pinos, A a Marcinkevicius S a Usman, M a Halln A a

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DYNAMICS; ELECTRICAL CHARACTERISTIC; ELECTRICAL COMPENSATION; GAN LAYERS; IMPLANTATION DOSE; ORDERS OF MAGNITUDE; PICOSECONDS; PROTON IMPLANTED; THREADING DISLOCATION; TIME-RESOLVED LUMINESCENCE; TIME-RESOLVED PHOTOLUMINESCENCE;

GALLIUM ALLOYS; GALLIUM NITRIDE; OPTICAL WAVEGUIDES; PROTONS; QUENCHING; SEMICONDUCTING GALLIUM;

CARRIER LIFETIME;

EID: 70349479052 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3226108 Document Type: Article

Times cited : (43)

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