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Journal of Applied Physics

Volumn 97, Issue 2, 2005, Pages

Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga) NGaN heterostructures

(5) Venngus P a Bougrioua, Z a Bethoux, J M a Azize, M a Tottereau, O a

a CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROINTERFACES; PLASTICAL RELAXATION; RELAXATION MECHANISMS; SURFACE KINETIC EFFECTS;

ALUMINUM COMPOUNDS; AMMONIA; CHEMICAL RELAXATION; COALESCENCE; CRACKS; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SAPPHIRE; SILICON; THREE DIMENSIONAL;

HETEROJUNCTIONS;

EID: 19944430468 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1828607 Document Type: Article

Times cited : (34)

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