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Applied Physics Letters

Volumn 95, Issue 18, 2009, Pages

Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy

(7) Pinos, A a Marcinkevicius S a Yang, J b Bilenko, Y b Shatalov, M b Gaska, R b Shur, M S c

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

b SENSOR ELECTRONIC TECHNOLOGY INC (United States)

c RENSSELAER POLYTECHNIC INSTITUTE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGING MECHANISM; ALGAN QUANTUM WELLS; ALLOY COMPOSITIONS; ALN; ATOM MIGRATION; EMISSION WAVELENGTH; MOLAR FRACTIONS; NEAR-FIELD OPTICAL SPECTROSCOPY; QUANTUM WELL;

EMISSION SPECTROSCOPY; LIGHT EMISSION; LIGHT EMITTING DIODES; PHYSICAL OPTICS; SEMICONDUCTOR QUANTUM WELLS;

OPTICAL EMISSION SPECTROSCOPY;

EID: 71049166859 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3262964 Document Type: Article

Times cited : (37)

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