Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Miccoli, Carmine ^a   Monzio Compagnoni, Christian ^a   Spinelli, Alessandro S ^a,b   Lacaita, Andrea L ^a,b  

^a POLITECNICO DI MILANO   (Italy)

^b IFN CNR   (Italy)

Author keywords

electron injection statistics; Flash memories; program verify; semiconductor device modeling

Indexed keywords

DECA-NANOMETER; ELECTRON-INJECTION STATISTICS; NAND FLASH MEMORY; NANO SCALE; PROGRAM VERIFY; PROGRAMMING TIME; SEMICONDUCTOR DEVICE MODELING; STEP PULSE;

ALGORITHMS; ELECTRON INJECTION; NAND CIRCUITS; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

FLASH MEMORY;

EID: 79959317550     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784588     Document Type: Conference Paper

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