Impact of control-gate and floating-gate design on the electron-injection spread of decananometer nand flash memories

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1196-1198

  Compagnoni, Christian Monzio ^a   Miccoli, Carmine ^a   Lacaita, Andrea L ^a,b   Marmiroli, Andrea ^c   Spinelli, Alessandro S ^a,b   Visconti, Angelo ^c  

^a POLITECNICO DI MILANO   (Italy)

^b IFN CNR   (Italy)

^c R and D Technology Development   (Italy)

Author keywords

Electron injection statistics; Flash memories; FowlerNordheim tunneling; semiconductor device modeling

Indexed keywords

CAPACITANCE REDUCTION; CAPACITANCE VALUES; DECA-NANOMETER; ELECTRON-INJECTION STATISTICS; FLOATING-GATES; FOWLERNORDHEIM TUNNELING; NAND FLASH MEMORY; NANO SCALE; POLYSILICON DEPLETION; SCALING TRENDS; SEMICONDUCTOR DEVICE MODELING; STEP PULSE; VOLTAGE STEP;

CAPACITANCE; ELECTROCHEMICAL CORROSION; ELECTRONS; NAND CIRCUITS; POLYSILICON;

FLASH MEMORY;

EID: 78049308945     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2066253     Document Type: Article

References (8)

1. C. Monzio Compagnoni, A. S. Spinelli, R. Gusmeroli, A. L. Lacaita, S. Beltrami, A. Ghetti, and A. Visconti, "First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming," in IEDM Tech. Dig., 2007, pp. 165-168.
2. C. Monzio Compagnoni, A. S. Spinelli, R. Gusmeroli, S. Beltrami, A. Ghetti, and A. Visconti, "Ultimate accuracy for the NAND Flash program algorithm due to the electron injection statistics," IEEE Trans. Electron Devices, vol. 55, no. 10, pp. 2695-2702, Oct. 2008.
3. C. Monzio Compagnoni, R. Gusmeroli, A. S. Spinelli, and A. Visconti, "Analytical model for the electron-injection statistics during programming of nanoscale NAND Flash memories," IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 3192-3199, Nov. 2008.
4. C. Friederich, J. Hayek, A. Kux, T. Muller, N. Chan, G. Kobernik, M. Specht, D. Richter, and D. Schmitt-Landsiedel, "Novel model for cell-system interaction MCSI in NAND Flash," in IEDM Tech. Dig., 2008, pp. 831-834.
5. A. Spessot, C. Monzio Compagnoni, F. Farina, A. Calderoni, A. S. Spinelli, and P. Fantini, "Effect of floating-gate polysilicon depletion on the erase efficiency of NAND Flash memories," IEEE Electron Device Lett., vol. 31, no. 7, pp. 647-649, Jul. 2010.
6. International Technology Roadmap for Semiconductors, 2009.
7. Y. Shin, "Non-volatile memory technologies for beyond 2010," in VLSI Symp. Tech. Dig., 2005, pp. 156-159.
8. G. Molas, D. Deleruyelle, B. De Salvo, G. Ghibaudo, M. Gely, S. Jacob, D. Lafond, and S. Deleonibus, "Impact of few electron phenomena on floating-gate memory reliability," in IEDM Tech. Dig., 2004, pp. 877-880.