Highly scalable NAND flash memory with robust immunity to program disturbance using symmetric inversion-type source and drain structure

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 118-119

  Lee, Chang Hyun ^a   Choi, Jungdal ^a   Park, Youngwoo ^a   Kang, Changseok ^a   Choi, Byeong In ^a   Kim, Hyunjae ^a   Oh, Hyunsil ^a   Lee, Won Seong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Fringing field; Inversion S D; NAND flash; Program disturbance; TANOS

Indexed keywords

NAND CIRCUITS; TECHNOLOGY;

CHANNEL DOPING; CHARGE SHARING; CURRENT DRIVABILITY; FRINGING FIELD; GATE FRINGING FIELD; INVERSION S/D; LATERAL DIFFUSION; NAND FLASH; NAND FLASH MEMORIES; NON-EXISTENCE; PROGRAM DISTURBANCE; SOURCE AND DRAIN; TANOS; TECHNOLOGY NODES; VLSI TECHNOLOGIES;

FLASH MEMORY;

EID: 51949102302     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588585     Document Type: Conference Paper

References (4)

1. st NVSMW, pp. 31-33. 2006.
2. Y. Park, et al, IEDM Tech. Dig., pp. 29-31. 2006.
3. C.H. Lee, et al, VLSI Tech. Dig., pp. 21-22. 2006
4. nd NVSMW, pp. 39-41. 2007.