Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Komori, Yosuke ^a   Kido, Masaru ^a   Kito, Masaru ^a   Katsumata, Ryota ^a   Fukuzumi, Yoshiaki ^a   Tanaka, Hiroyasu ^a   Nagata, Yuzo ^a   Ishiduki, Megumi ^a   Aochi, Hideaki ^a   Nitayama, Akihiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIT DENSITIES; MEMORY FILMS; PROGRAM AND ERASE; STORAGE DEVICES; ULTRA-HIGH DENSITIES;

DATA STORAGE EQUIPMENT; ELECTRON DEVICES; SILICON NITRIDE; THREE DIMENSIONAL;

FLASH MEMORY;

EID: 64549122322     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796831     Document Type: Conference Paper

References (2)

1. H. Tanaka et al., Symp. on VLSI Tech. Dig., pp14-15, 2007.
2. Y. Fukuzumi et al., IEDM Tech. Dig., pp 449-452, 2007.