Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Tsai, C Y ^a   Lee, T H ^a   Chin, Albert ^a   Wang, Hong ^b   Cheng, C H ^c   Yeh, F S ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

IMPLANTED DEVICE; PROGRAM/ERASE; TRAPPING LAYERS;

DURABILITY; ELECTRON DEVICES;

CHARGE TRAPPING;

EID: 79951816464     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703302     Document Type: Conference Paper

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