Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride trap density distribution

Applied Physics Letters

Volumn 85, Issue 4, 2004, Pages 660-662

  Kim, Tae Hun ^a   Sim, Jae Sung ^a   Lee, Jong Duk ^a   Shim, Hyung Cheol ^a   Park, Byung Gook ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC CHARGE; ELECTRIC POTENTIAL; ELECTRON TRAPS; ELECTRON TUNNELING; ELECTRONS; OXIDES; SILICA;

ELECTRON TRAPPING RATES; METAL-OXIDE-NITRIDE-OXIDE-SILICON (MONOS); NITRIDE TRAP DENSITY DISTRIBUTION; SILICON-OXIDE-NITRIDE-OXIDE-SILICON (SONOS) STRUCTURES; THERMAL EMISSIONS;

SILICON NITRIDE;

EID: 4043048598     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1773615     Document Type: Article

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