Charge trapping properties at silicon nitride/silicon oxide interface studied by variable-temperature electrostatic force microscopy

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  Tzeng, S D ^a   Gwo, S ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CHARGE; ELECTRON TUNNELING; INTERFACIAL ENERGY; SILICON COMPOUNDS; SILICON NITRIDE;

INTERFACE TRAP ENERGY; ULTRATHIN NITRIDE-OXIDE-SILICON (NOS) STRUCTURES; VARIABLE-TEMPERATURE ELECTROSTATIC FORCE MICROSCOPY (EFM);

ELECTRON TRAPS;

EID: 33746814810     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2218025     Document Type: Article

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