Correlating internal stresses, electrical activity and defect structure on the micrometer scale in EFG silicon ribbons

Solar Energy Materials and Solar Cells

Volumn 95, Issue 8, 2011, Pages 2264-2271

  Sarau, G ^a,b,c   Christiansen, S ^a,c   Holla, M ^d,e   Seifert, W ^d,e  

^a LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c MAX PLANCK INSTITUTE FOR THE SCIENCE OF LIGHT   (Germany)

^d IHP   (Germany)

^e BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Dislocations; Internal stresses; Microstructure; Multicrystalline silicon; Raman; Recombination activity

Indexed keywords

AS-GROWN; CRYSTALLOGRAPHIC ORIENTATIONS; DEFECT ETCHING; EFG SILICON; ELECTRICAL ACTIVITIES; ELECTRICAL QUALITY; ELECTRON BACKSCATTER DIFFRACTION TECHNIQUE; ELECTRON-BEAM-INDUCED CURRENT; INTERNAL STRESS; METALLIC IMPURITY; MICRO RAMAN SPECTROSCOPY; MICROMETER SCALE; MULTI-CRYSTALLINE SILICON; MULTICRYSTALLINE SILICON (MC-SI); NON-UNIFORM DISTRIBUTION; RAMAN; RECOMBINATION ACTIVITY; RESIDUAL STRESS STATE; STRESS FIELD; STRESS-INDUCED; STRUCTURAL DEFECT;

CRYSTAL GROWTH; CRYSTAL IMPURITIES; DEFECT STRUCTURES; DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; GRAIN BOUNDARIES; MECHANICAL STABILITY; MICROMETERS; MICROSTRUCTURE; POLYSILICON; RAMAN SPECTROSCOPY;

STRESSES;

EID: 79958158727     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.03.039     Document Type: Article

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