Correlation between residual strain and electrically active grain boundaries in multicrystalline silicon

Applied Physics Letters

Volumn 93, Issue 11, 2008, Pages

  Chen, Jun ^a   Chen, Bin ^a   Sekiguchi, Takashi ^a   Fukuzawa, Masayuki ^b   Yamada, Masayoki ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; CRYSTAL GROWTH; DIRECT ENERGY CONVERSION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; NONMETALS; SILICON; SOLAR ENERGY;

ELECTRICAL ACTIVITIES; ELECTRON BEAM-INDUCED CURRENT; LARGE STRAINS; MULTI-CRYSTALLINE SILICON; PROCESS YIELD; RESIDUAL STRAINS; SOLAR CELL EFFICIENCIES; STRONG RECOMBINATION CENTERS;

POLYSILICON;

EID: 52349118025     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2983649     Document Type: Article

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