Oxygen and lattice distortions in multicrystalline silicon

Solar Energy Materials and Solar Cells

Volumn 72, Issue 1-4, 2002, Pages 403-416

  Moller H J ^a   Funke, C ^a   Lawerenz, A ^a   Riedel, S ^a   Werner, M ^b  

^a TU BERGAKADEMIE FREIBERG   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Dislocations; Internal stresses; Interstitial oxygen; Oxygen precipitation; Solar silicon

Indexed keywords

CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTAL LATTICES; CRYSTAL MICROSTRUCTURE; CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT POLARIZATION; OXYGEN; PRECIPITATION (CHEMICAL); SILICON SOLAR CELLS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

LATTICE DISTORTIONS;

SILICON;

EID: 0036533123     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(01)00188-X     Document Type: Conference Paper

References (11)

1. Oxygen, carbon, hydrogen and nitrogen in crystalline silicon