New insight into the origin of twin and grain boundary in InP

Solid State Communications

Volumn 110, Issue 7, 1999, Pages 403-406

  Han, Y ^a   Lin, L ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; GRAIN BOUNDARIES; STOICHIOMETRY; STRESS ANALYSIS; STRESS RELAXATION; SYNCHROTRON RADIATION; TWINNING; X RAY ANALYSIS;

X-RAY REFLECTIVITY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032644246     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00010-1     Document Type: Article

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