Local strain measurement in a strain-engineered complementary metal-oxide-semiconductor device by geometrical phase analysis in the transmission electron microscope

Applied Physics Letters

Volumn 93, Issue 8, 2008, Pages

  Chung, Jayhoon ^a   Lian, Guoda ^a   Rabenberg, Lew ^b  

^a TEXAS INSTRUMENTS   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRON MICROSCOPES; HOLE MOBILITY; MICROSCOPES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES; SEMICONDUCTOR SWITCHES; TRANSMISSION ELECTRON MICROSCOPY;

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; LOCAL STRAINS; METAL-OXIDE SEMICONDUCTORS;

STRAIN;

EID: 51349131345     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2970050     Document Type: Article

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