The effect of metal thickness, overlayer and high-k surface treatment on the effective work function of metal electrode

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 101-104

  Choi, K ^a   Wen, H C ^a   Alshareef, H ^b   Harris, R ^c   Lysaght, P ^a   Luan, H ^d   Majhi, P ^e   Lee, B H ^f  

^a SEMATECH   (United States)

^b TI   (United States)

^c ADVANCED MICRO DEVICES   (United States)

^d Infineon   (United States)

^e INTEL CORPORATION   (United States)

^f IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); METALLIC FILMS; PHYSICAL VAPOR DEPOSITION; SURFACE TREATMENT; TITANIUM NITRIDE;

ELECTRODE DEPOSITION; FILM THICKNESS; METAL ELECTRODES; WORK FUNCTION;

ELECTRODES;

EID: 33751428888     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546595     Document Type: Conference Paper

References (8)

1. J. Lee, H. Zhong, Y. Suh, G. Heuss, J. Gurganus, B. Chen, and V. Misra "Tunable work function dual metal gate technology for bulk and non-bulk CMOS", IEDM, p.359 (2002)
2. R. Lin, L. Qiang, P. Ranade, T.-J. King, C. Hu, "An adjustable work function technology using Mo gate for CMOS devices", IEEE EDL (23) p.49 (2002)
3. S. B. Samavedam, L. B. La, P. J. Tobin, B. White, C. Hobbs et al., "Fermi level pinning with submonolayer MeOx and metal gates", IEDM, p.307 (2003)
4. G. Brown et al., Discussed in IEEE SISC conference (2004)
5. H. Wakabayashi, Y. Saito, K. Takeuchi, T. Mogami, T. Kunio, "A dual-metal gate CMOS technology using nitrogen-concentration-controlled TiNx film", IEEE Transactions on Electron Devices, (48) p. 2363 (2001)
6. I. S. Jeon, J. Lee, P. Zhao, P. Sivasubramani, T. Oh, H. J. Kim, D. Cha, J. Huang, M. J. Kim, B. E. Gnade, J. Kim, and R. M. Wallace, IEDM, p. (2004)
7. H. Kim, "The physical properties of cubic plasmaenhanced atomic layer deposition TaN films", Journal of Applied Physics (95) p. 5848 (2004)
8. M. Akbar, N. Moumen, J. Barnett, B. -H. Lee, J. C. Lee, "Mobility Improvement After HC1 Post-Deposition Cleaning of High-k Dielectric: A Potential Issue in Wet Etching of Dual Metal Gate Process Technology", IEEE Eletron Device Letters, 26 p. 163 (2004)