Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs

Solid-State Electronics

Volumn 54, Issue 12, 2010, Pages 1592-1597

  Rodrigues, M ^a   Martino, J A ^a   Mercha, A ^b   Collaert, N ^b   Simoen, E ^b   Claeys, C ^b,c  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

GIFBE; HfSiO nitridation; Low frequency noise; SOI multiple gate FET (MuGFET); TiN metal gate

Indexed keywords

GIFBE; HFSIO NITRIDATION; LOW-FREQUENCY NOISE; MULTIPLE GATES; TIN METAL GATE;

FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); MESFET DEVICES; METALS; NITRIDATION; THERMAL NOISE; TITANIUM;

TITANIUM NITRIDE;

EID: 77957322702     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.07.007     Document Type: Article

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