Evaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation

Solid-State Electronics

Volumn 51, Issue 2, 2007, Pages 285-291

  Pavanello, M A ^a,b   Martino, J A ^a,b   Simoen, E ^c   Rooyackers, R ^c   Collaert, N ^c   Claeys, C ^c,d  

^a CENTRO UNIVERSITÁRIO DA FEI   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Analog operation; Early voltage; FinFET; Intrinsic gain; Triple gate; Volume inversion

Indexed keywords

ANALOG DIFFERENTIAL ANALYZERS; DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTRIC POTENTIAL; MOS CAPACITORS; SILICA;

ANALOG OPERATION; EARLY VOLTAGE; INTRINSIC GAIN; VOLUME INVERSION;

FIELD EFFECT TRANSISTORS;

EID: 33847369474     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.01.012     Document Type: Article

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